QPA1006D

Qorvo
772-QPA1006D
QPA1006D

Mfr.:

Description:
RF Amplifier 10.7-12.7 GHz 35W PA Die

ECAD Model:
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This product may require additional documentation to export from the United States.

Availability

Stock:
Non-Stocked
Factory Lead-Time:
20 Weeks Estimated factory production time.
Minimum: 10   Multiples: 10
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$975.38 $9,753.80

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Amplifier
Shipping Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
10.7 GHz to 12.7 GHz
20 V
1.2 A
21.5 dB
Power Amplifiers
SMD/SMT
Die
GaN SiC
- 40 C
+ 85 C
QPA1006D
Gel Pack
Brand: Qorvo
Development Kit: 1138267
Input Return Loss: 17 dB
Number of Channels: 1 Channel
Pd - Power Dissipation: 118.9 W
Product Type: RF Amplifier
Factory Pack Quantity: 10
Subcategory: Wireless & RF Integrated Circuits
Test Frequency: 12.7 GHz
Unit Weight: 2.338 g
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5-0810-13

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USHTS:
8542330001
TARIC:
8542330000
ECCN:
3A001.b.2.b.2

QPA1006D Wide Band Power Amplifier MMIC

Qorvo QPA1006D Wide Band Power Amplifier MMIC is fabricated on Qorvo's production 0.15μm GaN on SiC process (QGaN15). The QPA1006D covers the 10.7GHZ to 12.7GHz range and provides >35W saturated output power. The device also provides >17dB large-signal gain while achieving >39% power-added efficiency. The QPA1006D RF input port is DC coupled to the ground for optimum ESD performance. The QPA1006D RF ports have DC-blocking capacitors and are matched to 50Ω. The QPA1006D can support a wide range of operating conditions, including CW operation, ideal for commercial and military systems. The device is lead-free and RoHS-compliant.