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IGOT65R055D2AUMA1

Name: Infineon IGOT65R055D2AUMA1
Brand: Infineon Technologies
SKU: 726-IGOT65R055D2AUMA
Price: 10.61 CAD
Availability: InStock

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Mouser #:

726-IGOT65R055D2AUMA

Mfr. #:

IGOT65R055D2AUMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs HV GAN DISCRETES

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGOT65R055D2AUMA1 Datasheet (PDF)

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More Information

Learn more about Infineon Technologies IGOT65R055D2AUMA1

In Stock: 623

Stock:: 623 Can Ship Immediately

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Factory Lead-Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$10.61	$10.61
	$7.06	$70.60
	$5.21	$521.00
	$4.19	$2,095.00
Full Reel (Order in multiples of 800)
	$4.05	$3,240.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	HEMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Rds On - Drain-Source Resistance:	66 mOhms
Vgs - Gate-Source Voltage:	- 10 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	6.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	Power Transistors
Product Type:	GaN FETs
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Type:	GaN Power Transistor

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Datasheet

IGOT65R055D2AUMA1 Datasheet (PDF)

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Indonesia
Assembly Country of Origin:: Indonesia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

CoolGan™ 600V e-Mode Power Transistors

Infineon Technologies CoolGan™ 600V Enhancement Mode (e-Mode) Power Transistors enable simpler half-bridge topologies with fast turn-on and turn-off speeds. The rugged and reliable transistors are available in high-performing SMD packages to fully exploit the benefits of GaN. The transistors feature high efficiency, high power density, higher operating frequency capability, and reduced EMI. Applications include telecom / datacom / server SMPS, wireless charging, chargers, and adapters.