QPD0020 GaN RF Power Transistors

Qorvo QPD0020 GaN RF Power Transistors are 35W unmatched discrete GaN on SiC HEMT which operates from DC to 6GHz on a +48V supply rail. The devices are suited for base station, radar, and communications applications. The transistors support CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

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Select Image Part # Mfr. Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity. Qty. RoHS
Qorvo RF Bipolar Transistors DC-6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor 100In Stock
Min.: 1
Mult.: 1
Reel: 100

Qorvo GaN FETs DC-6GHz 35W 50V GaN Transistor Non-Stocked Lead-Time 16 Weeks
Min.: 500
Mult.: 500
Reel: 500