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RF3L05150CB4

Name: STMicroelectronics RF3L05150CB4
Brand: STMicroelectronics
SKU: 511-RF3L05150CB4
Price: 282.95 CAD
Availability: OutOfStock

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Mouser #:

511-RF3L05150CB4

Mfr. #:

RF3L05150CB4

Mfr.:

STMicroelectronics

Description:

RF MOSFET Transistors 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

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Datasheet:

RF3L05150CB4 Datasheet (PDF)

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Availability

Stock:: 0

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Factory Lead-Time:: 52 Weeks Estimated factory production time.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$282.95	$282.95
	$224.34	$2,243.40
Full Reel (Order in multiples of 100)
	$224.34	$22,434.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	2.5 A
Vds - Drain-Source Breakdown Voltage:	28 V
Rds On - Drain-Source Resistance:	1 Ohms
Operating Frequency:	945 MHz
Gain:	16 dB
Output Power:	150 W
Maximum Operating Temperature:	+ 200 C
Mounting Style:	Through Hole
Package / Case:	LBB-4
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Number of Channels:	1 Channel
Product Type:	RF MOSFET Transistors
Factory Pack Quantity:	100
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Unit Weight:	2.400 g

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Datasheet

RF3L05150CB4 Datasheet (PDF)

Compliance Codes

USHTS:: 8541290055
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

RF3L05150CB4 RF Power LDMOS Transistor

STMicroelectronics RF3L05150CB4 RF Power LDMOS Transistor is a 150W, 28/32V LDMOS FET designed for wide-band communication and ISM applications. The STM RF3L05150CB4 LDMOS Transistor is designed for applications with frequencies from HF to 1GHz. The RF3L05150CB4 can be used in class AB, B, or C for all typical modulation formats.

LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.