RF3L05150CB4

STMicroelectronics
511-RF3L05150CB4
RF3L05150CB4

Mfr.:

Description:
RF MOSFET Transistors 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

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Availability

Stock:
Non-Stocked
Factory Lead-Time:
Long lead time reported on this product.
Minimum: 100   Multiples: 100
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 100)
$231.32 $23,132.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: RF MOSFET Transistors
RoHS:  
N-Channel
Si
2.5 A
28 V
1 Ohms
945 MHz
16 dB
150 W
+ 200 C
Through Hole
LBB-4
Reel
Brand: STMicroelectronics
Number of Channels: 1 Channel
Product Type: RF MOSFET Transistors
Factory Pack Quantity: 100
Subcategory: MOSFETs
Type: RF Power MOSFET
Unit Weight: 2.400 g
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Attributes selected: 0

USHTS:
8541290055
TARIC:
8541290000
ECCN:
EAR99

RF3L05150CB4 RF Power LDMOS Transistor

STMicroelectronics RF3L05150CB4 RF Power LDMOS Transistor is a 150W, 28/32V LDMOS FET designed for wide-band communication and ISM applications. The STM RF3L05150CB4 LDMOS Transistor is designed for applications with frequencies from HF to 1GHz. The RF3L05150CB4 can be used in class AB, B, or C for all typical modulation formats.

LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.