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STD80N240K6

Name: STMicroelectronics STD80N240K6
Brand: STMicroelectronics
SKU: 511-STD80N240K6
Price: 8.01 CAD
Availability: InStock

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Mouser #:

511-STD80N240K6

Mfr. #:

STD80N240K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

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Datasheet:

STD80N240K6 Datasheet (PDF)

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Learn more about STMicroelectronics STD80N240K6

In Stock: 364

Stock:: 364

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On Order:: 2,500

Expected 2026-08-17
Factory Lead-Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$8.01	$8.01
	$5.87	$58.70
	$4.74	$474.00
	$4.22	$2,110.00
	$3.61	$3,610.00
Full Reel (Order in multiples of 2500)
	$3.61	$9,025.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	16 A
Rds On - Drain-Source Resistance:	220 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	105 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Product Type:	MOSFETs
Factory Pack Quantity:	2500
Subcategory:	Transistors
Unit Weight:	330 mg

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Datasheet

STD80N240K6 Datasheet (PDF)

PCN

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STD80N240K6 800V 16A MDmesh K6 Power MOSFET

STMicroelectronics STD80N240K6 800V 16A MDmesh™ K6 Power MOSFET offers an excellent R_DS(on) x area and a low total gate charge (Q_g), enabling high switching speeds and low losses. An integrated ESD protection diode increases the overall ruggedness of the STD80N240K6 MOSFET up to Human Body Model (HBM) Class 2. The MDmesh K6 MOSFETs have a reduced threshold voltage compared with the previous MDmesh K5 generation, enabling a lower driving voltage and thus reducing power losses and gaining efficiency mainly for zero-watt standby applications. The STD80N240K6 is optimized for lighting applications based on flyback topology, such as LED drivers and HID lamps. The device is also ideal for adapters and power supplies for flat-panel displays.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.