It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

QPD1016LEVB01

Name: Qorvo QPD1016LEVB01
Brand: Qorvo
SKU: 772-QPD1016LEVB01
Price: 2548 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

772-QPD1016LEVB01

Mfr. #:

QPD1016LEVB01

Mfr.:

Qorvo

Description:

RF Development Tools DC-1.7 GHz, 500W, 50V, GaN RF Tr

Datasheet:

QPD1016LEVB01 Datasheet (PDF)

More Information

Learn more about Qorvo QPD1016LEVB01

In Stock: 1

Stock:: 1

Can Ship Immediately

An unexpected error occurred. Please try again later.
On Order:: 1

Expected 2026-02-19
Factory Lead-Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$2,548.00	$2,548.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Development Tools
RoHS:
Product:	Evaluation Boards
Type:	RF Transceiver
Tool Is For Evaluation Of:	QPD1016L
Brand:	Qorvo
Packaging:	Bag
Product Type:	RF Development Tools
Series:	QPD1016L
Factory Pack Quantity:	1
Subcategory:	Development Tools

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

QPD1016LEVB01 Datasheet (PDF)

USHTS:: 9030820000
ECCN:: EAR99

QPD1016LEVB01 Evaluation Board

Qorvo QPD1016LEVB01 Evaluation Board is a demonstration and development platform for the QPD1016L GaN RF Transistor. The QPD1016L is a 500W (P3dB) pre-matched discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from DC to 1.7GHz. The QPD1016L provides a linear gain of 18dB at 1.3GHz and features a drain efficiency of 67% at 3dB compression. The device can support pulsed and linear operations.