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BSC010NE2LS

Name: Infineon BSC010NE2LS
Brand: Infineon Technologies
SKU: 726-BSC010NE2LS
Price: 2.29 CAD
Availability: InStock

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Mouser #:

726-BSC010NE2LS

Mfr. #:

BSC010NE2LS

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

BSC010NE2LS Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies BSC010NE2LS

In Stock: 5,814

Stock:: 5,814 Can Ship Immediately

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Factory Lead-Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 5814 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.29	$2.29
	$1.61	$16.10
	$1.34	$134.00
	$1.26	$630.00
Full Reel (Order in multiples of 5000)
	$1.08	$5,400.00
	$0.907	$9,070.00
25,000	Quote

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part #:

BSC010NE2LSATMA1

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$2.64

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	64 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4.4 ns
Forward Transconductance - Min:	85 S
Product Type:	MOSFETs
Rise Time:	6 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	6.7 ns
Part # Aliases:	BSC1NE2LSXT SP000776124 BSC010NE2LSATMA1
Unit Weight:	110 mg

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Filter Document:

Datasheet

BSC010NE2LS Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

BSC010NE2LS MOSFET

Infineon Technologies BSC010NE2LS MOSFET is a DC-DC Point-of-Load (POL) Topology buck converter which is the most basic SMPS topology. It is widely used throughout the industry to convert a higher input voltage into a lower output voltage. The buck converter (voltage step-down converter) is a non isolated converter, hence galvanic isolation between input and output is not given.

Switch Mode Power Supplies (SMPS)

Infineon Technologies Switch Mode Power Supplies (SMPS) are a cost-effective line that includes high voltage MOSFETs, control ICs, and Silicon Carbide diodes for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these SMPS products Infineon supports the trends towards continuously reducing power consumption. Especially versatile is the new CoolMOS™ 600V C6 family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For synchronous rectification the OptiMOS™ 3 series offers extremely low on-state resistance and low capacitances. Infineon's new control ICs support topologies such as quasi-resonant flyback and LLC.

20V-60V OptiMOS Power MOSFETs

Infineon's 20V-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar microinverter), power supply (e.g. server and telecom), and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency, and lower cost.