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SIZ340BDT-T1-GE3

Name: Vishay SIZ340BDT-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIZ340BDT-T1-GE3
Price: 1.72 CAD
Availability: InStock

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Mouser #:

78-SIZ340BDT-T1-GE3

Mfr. #:

SIZ340BDT-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs DUAL N-CHANNEL 30-V (D-S) MOSFET

Datasheet:

SIZ340BDT-T1-GE3 Datasheet

ECAD Model:

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More Information

Learn more about Vishay / Siliconix SIZ340BDT-T1-GE3

In Stock: 6,418

Stock:: 6,418 Can Ship Immediately

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Factory Lead-Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.72	$1.72
	$1.08	$10.80
	$0.708	$70.80
	$0.548	$274.00
	$0.507	$507.00
Full Reel (Order in multiples of 3000)
	$0.43	$1,290.00
	$0.407	$2,442.00
	$0.375	$3,375.00
	$0.362	$8,688.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPAIR-3x3
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	36 A, 69.3 A
Rds On - Drain-Source Resistance:	4.31 mOhms, 8.56 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	8.4 nC, 15.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	16.7 W, 31 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	5 ns, 7 ns
Forward Transconductance - Min:	30 S, 60 S
Product Type:	MOSFETs
Rise Time:	6 ns, 7 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	18 ns, 22 ns
Typical Turn-On Delay Time:	8 ns, 12 ns
Unit Weight:	143.050 mg

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Datasheet

SIZ340BDT-T1-GE3 Datasheet

PCN

Product Change Notification 2024-01-09 (PDF)

Technical Resources

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SiZ340BDT Dual N-Channel 30V MOSFET

Vishay / Siliconix SiZ340BDT Dual N-Channel 30V MOSFET features a dual configuration design with TrenchFET® Gen IV power. The module offers 30V_DS drain-source voltage and 150A pulsed drain current in a temperature range of -55°C to +150°C. Vishay / Siliconix SiZ340BDT Dual N-Channel 30V MOSFET is halogen-free and RoHS-compliant. Typical applications are CPU core power, synchronous buck converters, telecom DC/DC, and computers.