Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.

Results: 20
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Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
APC-E SiC MOSFETs 650V 50mR, TO-247-4L, Industrial Grade
Datasheet
288In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC MOSFETs 1200V 75mR, TO-247-4L, Automotive Grade
Datasheet
300In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC MOSFETs 1200V 75mR, TO-247-4L, Industrial Grade
Datasheet
300In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC MOSFETs 650V 50mR, TO-247-4L, Automotive Grade
Datasheet
300In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC MOSFETs 650V 27mR, TO-247-4L, Automotive Grade
Datasheet
300In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFETs 1200V 30mR, TO-247-4L, Automotive Grade
Datasheet
300In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 57 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement
APC-E SiC MOSFETs 1200V 13mR, TO247-4L, Industrial Grade
Datasheet
300In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 160 A 16 mOhms - 10 V, 25 V 3.6 V 213 nC - 55 C + 175 C 750 W Enhancement
APC-E SiC MOSFETs 1200V 13mR, TO247-4L, Automotive Grade
Datasheet
300In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 145 A 13 mOhms 18 V + 175 C
APC-E SiC MOSFETs 650V 27mR, SAPKG-9L, Automotive Grade
Datasheet
600Expected 2026-08-28
Min.: 1
Mult.: 1
Reel: 600

SMD/SMT SAPKG-9L N-Channel 1 Channel 650 V 81 A 35 mOhms - 10 V, 25 V 4.2 V 87 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFETs 650V 35mR, TO-247-4L, Automotive Grade
300Expected 2026-04-03
Min.: 1
Mult.: 1

Through Hole TO-247-4L 650 V
APC-E SiC MOSFETs 1200V 20mR, TO-247-4L, Industrial Grade
Datasheet
300Expected 2026-04-03
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 88 A 26 mOhms - 10 V, 25 V 4.2 V 154 nC - 55 C + 175 C 403 W Enhancement
APC-E SiC MOSFETs 650V 27mR, TO-247-4L, Industrial Grade
Datasheet
300Expected 2026-03-27
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFETs 1200V 30mR, TO-247-4L, Industrial Grade
Datasheet
300Expected 2026-03-27
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 58 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement

APC-E SiC MOSFETs 650V 65mR, TO-247-3L, Automotive Grade
300Expected 2026-05-01
Min.: 1
Mult.: 1

Through Hole TO-247-3L 650 V
APC-E SiC MOSFETs 650V 35mR, TO-247-4L, Industrial Grade
300Expected 2026-04-03
Min.: 1
Mult.: 1

Through Hole TO-247-4L 650 V

APC-E SiC MOSFETs 650V 65mR, TO-247-3L, Industrial Grade
300Expected 2026-05-01
Min.: 1
Mult.: 1

Through Hole TO-247-3L 650 V
APC-E SiC MOSFETs 1700V 1000mR, TO247-3L, Industrial Grade
Datasheet
300Expected 2026-03-27
Min.: 1
Mult.: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C
APC-E SiC MOSFETs 1200V 75mR, TO247-4L, Automotive Grade
Datasheet
Non-Stocked Lead-Time 15 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 41 A 75 mOhms 15 V + 175 C
APC-E SiC MOSFETs 1200V 32mR, TO247-4L, Industrial Grade
Datasheet
Non-Stocked Lead-Time 15 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 77 A 32 mOhms 15 V + 175 C
APC-E SiC MOSFETs 1200V 75mR, TO247-4L, Industrial Grade
Datasheet
Non-Stocked Lead-Time 15 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 35 A 75 mOhms 15 V + 175 C