Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.

Résultats: 20
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Description Fiche technique Disponibilité Prix (CAD) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Style de montage
Package/Boîte
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Qg - Charge de grille
Température de fonctionnement min.
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
APC-E SiC MOSFET 1200V 75mR, TO-247-4L, Automotive Grade
Fiche technique
290En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC MOSFET 650V 50mR, TO-247-4L, Automotive Grade
Fiche technique
266En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC MOSFET 1200V 30mR, TO-247-4L, Automotive Grade
Fiche technique
300En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 1 Channel 1.2 kV 57 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement
APC-E SiC MOSFET 650V 35mR, TO-247-4L, Automotive Grade 300En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 650 V
APC-E SiC MOSFET 1200V 30mR, TO-247-4L, Industrial Grade
Fiche technique
300En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 1 Channel 1.2 kV 58 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement
APC-E SiC MOSFET 1200V 13mR, TO247-4L, Automotive Grade
Fiche technique
290En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 1.2 kV 145 A 13 mOhms 18 V + 175 C
APC-E SiC MOSFET 650V 27mR, TO-247-4L, Automotive Grade
Fiche technique
300En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFET 1200V 13mR, TO247-4L, Industrial Grade
Fiche technique
265En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 1 Channel 1.2 kV 160 A 16 mOhms - 10 V, 25 V 3.6 V 213 nC - 55 C + 175 C 750 W Enhancement
APC-E SiC MOSFET 650V 27mR, TO-247-4L, Industrial Grade
Fiche technique
300En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFET 650V 35mR, TO-247-4L, Industrial Grade 290En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 650 V
APC-E SiC MOSFET 650V 50mR, TO-247-4L, Industrial Grade
Fiche technique
268En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC MOSFET 1200V 75mR, TO-247-4L, Industrial Grade
Fiche technique
262En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4L 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC MOSFET 1700V 1000mR, TO247-3L, Industrial Grade
Fiche technique
300En stock
Min. : 1
Mult. : 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C
APC-E SiC MOSFET 650V 27mR, SAPKG-9L, Automotive Grade
Fiche technique
6002026-11-18 attendu
Min. : 1
Mult. : 1
: 600

SMD/SMT SAPKG-9L 1 Channel 650 V 81 A 35 mOhms - 10 V, 25 V 4.2 V 87 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFET 1200V 20mR, TO-247-4L, Industrial Grade
Fiche technique
3002026-11-18 attendu
Min. : 1
Mult. : 1

Through Hole TO-247-4L 1 Channel 1.2 kV 88 A 26 mOhms - 10 V, 25 V 4.2 V 154 nC - 55 C + 175 C 403 W Enhancement

APC-E SiC MOSFET 650V 65mR, TO-247-3L, Automotive Grade
3002026-11-18 attendu
Min. : 1
Mult. : 1

Through Hole TO-247-3L 650 V

APC-E SiC MOSFET 650V 65mR, TO-247-3L, Industrial Grade
3002026-11-18 attendu
Min. : 1
Mult. : 1

Through Hole TO-247-3L 650 V
APC-E SiC MOSFET 1200V 75mR, TO247-4L, Automotive Grade
Fiche technique
Non stocké
Min. : 1
Mult. : 1

Through Hole TO-247-4 1.2 kV 41 A 75 mOhms 15 V + 175 C
APC-E SiC MOSFET 1200V 32mR, TO247-4L, Industrial Grade
Fiche technique
Non stocké
Min. : 1
Mult. : 1

Through Hole TO-247-4 1.2 kV 77 A 32 mOhms 15 V + 175 C
APC-E SiC MOSFET 1200V 75mR, TO247-4L, Industrial Grade
Fiche technique
Non stocké
Min. : 1
Mult. : 1

Through Hole TO-247-4 1.2 kV 35 A 75 mOhms 15 V + 175 C