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NVMFS5832NLWFT1G-UM

Name: onsemi NVMFS5832NLWFT1G-UM
Brand: onsemi
SKU: 863-FS5832NLWFT1G-UM
Price: 3.04 CAD
Availability: OutOfStock

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Mouser #:

863-FS5832NLWFT1G-UM

Mfr. #:

NVMFS5832NLWFT1G-UM

Mfr.:

onsemi

Description:

MOSFETs NFET SO8FL 40V 120A 4.2MO

Lifecycle:

New Product:

New from this manufacturer.

ECAD Model:

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More Information

Learn more about onsemi NVMFS5832NLWFT1G-UM

Availability

Stock:: 0

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On Order:: 1,500

Expected 2026-04-10
Factory Lead-Time:: 40

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$3.04	$3.04
	$1.94	$19.40
	$1.34	$134.00
	$1.13	$565.00
	$0.949	$949.00
Full Reel (Order in multiples of 1500)
	$0.949	$1,423.50

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	4.2 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	51 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	127 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	21 S
Product Type:	MOSFETs
Rise Time:	24 ns
Series:	NVMFS5832NL
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	13 ns

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Attributes selected: 0

USHTS:: 8541290095
TARIC:: 8541290000
ECCN:: EAR99

NVMFS5832NL Single N-Channel Power MOSFET

onsemi NVMFS5832NL Single N-Channel Power MOSFET is a high-performance MOSFET designed for low-voltage applications requiring efficient power switching. Built on advanced trench technology, the onsemi NVMFS5832NL offers an exceptionally low R_DS(on) of 4.2mΩ at V_GS = 10V, enabling reduced conduction losses and improved thermal performance. With a maximum drain-source voltage of 40V and a continuous drain current rating of up to 120A, this MOSFET is ideal for demanding environments such as DC-DC converters, synchronous rectification, and motor control. The compact 5mm x 6mm Power DFN package ensures high power density and excellent thermal dissipation, while the device’s low gate charge supports fast switching for enhanced efficiency in high-frequency designs.

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onsemi NVMFSCx Automotive Power 40V and 60V MOSFETs are available in 5mm x 6mm dual-sided cooled packages ideal for compact and efficient designs. The single N-Channel devices feature 1.5mΩ and 0.9mΩ R_DS(on) drain-source on-resistance to minimize conductive losses. The MOSFETs includes a wettable flank option available for enhanced optical inspection. The devices are also AEC-Q101-qualified and PPAP-capable, making them suitable for automotive applications.

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