CoolSiC™ 650V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 650V G2 Silicon Carbide MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion. Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives, and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.

Results: 53
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Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
258In Stock
Min.: 1
Mult.: 1
Reel: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 196 A 8.5 mOhms - 7 V, + 23 V 5.6 V 179 nC - 55 C + 175 C 937 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
447In Stock
Min.: 1
Mult.: 1
Reel: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 94 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 499 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
624In Stock
Min.: 1
Mult.: 1
Reel: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 97 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 394 W Enhancement
Infineon Technologies SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling
Datasheet
1,048In Stock
1,800Expected 2026-02-20
Min.: 1
Mult.: 1
Reel: 1,800

SMD/SMT N-Channel 1 Channel 650 V 82 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling
Datasheet
1,676In Stock
Min.: 1
Mult.: 1
Reel: 1,800

SMD/SMT N-Channel 1 Channel 650 V 68 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 312 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,627In Stock
Min.: 1
Mult.: 1
Reel: 1,800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 40 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,783In Stock
Min.: 1
Mult.: 1
Reel: 1,800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 60 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
682In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 440 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,960In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 81 A 33 mOhms 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,868In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 58.7 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 277 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2
Datasheet
348In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 130 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
480In Stock
240Expected 2026-03-05
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2
Datasheet
380In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
394In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2
Datasheet
243In Stock
480Expected 2026-02-16
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 144 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,063In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 103 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
361In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
136In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 115 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 416 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2
Datasheet
262In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2
Datasheet
299In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
343In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 40 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
333In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 50 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
276In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 60 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
122In Stock
240Expected 2026-08-20
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 83 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 273 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,996Expected 2027-02-03
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 131 A 18 mOhms - 7 V to 23 V 4.5 V 148 nC - 55 C + 175 C 535 W Enhancement CoolSiC