TK16A60W,S4VX

Toshiba
757-TK16A60WS4VX
TK16A60W,S4VX

Mfr.:

Description:
MOSFETs N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC

ECAD Model:
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In Stock: 121

Stock:
121 Can Ship Immediately
Factory Lead-Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$5.49 $5.49
$2.54 $25.40
$2.37 $237.00
$2.03 $1,015.00
$1.84 $1,840.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
N-Channel
1 Channel
DTMOSIV
Tube
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: TK16A60W
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 2 g
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CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

TK16x60W Si N-Channel MOSFETs (DTMOSIV)

Toshiba TK16x60W Si N-Channel MOSFETs (DTMOSIV) exhibit the chip design of DTMOSIV generation and come in different variants. The Si N-channel MOSFETs feature low drain-source on-resistance and fast reverse recovery time. These MOSFETs can easily control gate switching. The TK16x60W MOSFETs are available in different dimensions and come in other packages, including DFN8x8, TO-247, TO-3P(N), D2PAK, TO-220, and TO-220SIS. These Toshiba TK16x60W Si N-Channel MOSFETs are used in switching voltage regulators.

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.