TGA2622-SM

Qorvo
772-TGA2622-SM
TGA2622-SM

Mfr.:

Description:
RF Amplifier 9-10GHz 35W GaN PAE >42% SSG >30dB

Datasheet:
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This product may require additional documentation to export from the United States.

Availability

Stock:
Non-Stocked
Factory Lead-Time:
Minimum: 10   Multiples: 10
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$1,039.28 $10,392.80

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Amplifier
Shipping Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
9 GHz to 10 GHz
28 V
290 mA
32.7 dB
Power Amplifiers
SMD/SMT
QFN-22
GaN SiC
40 dBm
- 40 C
+ 85 C
TGA2622
Waffle
Brand: Qorvo
Development Kit: TGA2622-SM EVB
Input Return Loss: 14.7 dB
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Pd - Power Dissipation: 88 W
Product Type: RF Amplifier
Factory Pack Quantity: 10
Subcategory: Wireless & RF Integrated Circuits
Part # Aliases: TGA2622 1132087
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CAHTS:
8542330000
CNHTS:
8542319090
USHTS:
8542330001
KRHTS:
8532331000
TARIC:
8542330000
MXHTS:
8542330201
ECCN:
3A001.b.2.b.2

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Power Amplifiers

Qorvo GaN Power Amplifiers allow unique, cost-effective solutions across a variety of applications. With these high-power amplifiers designed for military, commercial, satellite communications and radar systems, Qorvo offers GaN-based products meeting today's market needs and future requirements.

T1GA26xx-SM Low Noise Amplifiers

Qorvo TGA26xx-SM Low Noise Amplifiers are fabricated on a 0.25um GaN on SiC process (TQGaN25). Covering 2GHz to 6GHz, the TGA26xx-SM Amplifiers typically provides >22dB small signal gain and 30dBm of OTOI with 1.0dB NF. In addition to the high electrical performance, this GaN amplifier also provides a high level of input power robustness. Able to survive a high level of input power without performance degradation, Qorvo TGA26xx-SM provides flexibility regarding receive chain protection, resulting in reduced board space. This device is ideal for radar and satellite communication applications.

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