TGA2237-SM

Qorvo
772-TGA2237-SM
TGA2237-SM

Mfr.:

Description:
RF Amplifier 30-2500MHz 10W GaN PAE > 50% Gain 19dB

Lifecycle:
Verify Status with Factory:
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Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead-Time:
16 Weeks Estimated factory production time.
Minimum: 25   Multiples: 25
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$278.61 $6,965.25
100 Quote

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Amplifier
RoHS:  
30 MHz to 2.5 GHz
32 V
360 mA
19 dB
Power Amplifiers
SMD/SMT
QFN-32
GaN SiC
33 dBm
- 40 C
+ 85 C
TGA2237
Waffle
Brand: Qorvo
Development Kit: TGA2237-SM Eval Board
Input Return Loss: 10 dB
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Pd - Power Dissipation: 19 W
Product Type: RF Amplifier
Factory Pack Quantity: 25
Subcategory: Wireless & RF Integrated Circuits
Part # Aliases: TGA2237
Unit Weight: 188.600 mg
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CAHTS:
8542330000
CNHTS:
8542339000
USHTS:
8542330001
JPHTS:
8542330996
KRHTS:
8532331000
TARIC:
8542330000
MXHTS:
8542330299
ECCN:
EAR99

GaN Power Amplifiers

Qorvo GaN Power Amplifiers allow unique, cost-effective solutions across a variety of applications. With these high-power amplifiers designed for military, commercial, satellite communications and radar systems, Qorvo offers GaN-based products meeting today's market needs and future requirements.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

TGA2237 Wideband Distributed Amplifier

Qorvo TGA2237 Wideband Distributed Amplifier is fabricated on the Qorvo production 0.25um Gallium-Nitride (GaN) on Silicon Carbide (SiC) process. The TGA2237 operates from 0.03GHz to 2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 50.% power-added efficiency. The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237 amplifier is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

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