STGD4M65DF2

STMicroelectronics
511-STGD4M65DF2
STGD4M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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Datasheet:
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In Stock: 2,128

Stock:
2,128 Can Ship Immediately
Factory Lead-Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$2.36 $2.36
$1.48 $14.80
$0.986 $98.60
$0.778 $389.00
$0.702 $702.00
Full Reel (Order in multiples of 2500)
$0.595 $1,487.50
$0.569 $2,845.00
$0.561 $5,610.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
DPAK-3 (TO-252-3)
SMD/SMT
Single
650 V
1.6 V
- 20 V, 20 V
8 A
68 W
- 55 C
+ 175 C
STGD4M65DF2
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 8 A
Gate-Emitter Leakage Current: +/- 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 2500
Subcategory: IGBTs
Unit Weight: 330 mg
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Attributes selected: 0

CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

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