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SMUN5213DW1T1G

Name: onsemi SMUN5213DW1T1G
Brand: onsemi
SKU: 863-SMUN5213DW1T1G
Price: 0.41 CAD
Availability: InStock

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Mouser #:

863-SMUN5213DW1T1G

Mfr. #:

SMUN5213DW1T1G

Mfr.:

onsemi

Description:

Digital Transistors SS BR XSTR NPN 50V

Datasheet:

SMUN5213DW1T1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi SMUN5213DW1T1G

In Stock: 19,491

Stock:: 19,491 Can Ship Immediately

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Factory Lead-Time:: 42 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.414	$0.41
	$0.253	$2.53
	$0.157	$15.70
	$0.115	$57.50
	$0.103	$103.00
Full Reel (Order in multiples of 3000)
	$0.084	$252.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Digital Transistors
RoHS:
Configuration:	Dual
Transistor Polarity:	NPN
Typical Input Resistor:	47 kOhms
Typical Resistor Ratio:	1
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
DC Collector/Base Gain hfe Min:	80
Collector- Emitter Voltage VCEO Max:	50 V
Continuous Collector Current:	100 mA
Pd - Power Dissipation:	250 mW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	MUN5213DW1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Operating Temperature Range:	- 55 C to + 150 C
Product Type:	Digital Transistors
Qualification:	AEC-Q100
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	6.200 mg

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Datasheet

SMUN5213DW1T1G Datasheet

PCN

CAHTS:: 8541210000
CNHTS:: 8542399000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

Dual NPN Bipolar Digital Transistors

onsemi Dual NPN Bipolar Digital Transistors are designed to replace a single device and the additional external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors (a series base resistor and a base-emitter resistor). By integrating these individual components into a single device, the BRT on these onsemi NPN Bipolar Digital Transistors simplifies circuit design and eliminates them. A BRT also reduces system cost and board space.