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SIR4606DP-T1-GE3

Name: Vishay SIR4606DP-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SIR4606DP-T1-GE3
Price: 2.79 CAD
Availability: InStock

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Mouser #:

78-SIR4606DP-T1-GE3

Mfr. #:

SIR4606DP-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-CHANNEL 60-V (D-S) MOSFET

Datasheet:

SIR4606DP-T1-GE3 Datasheet

ECAD Model:

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In Stock: 30,772

Stock:: 30,772 Can Ship Immediately

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.79	$2.79
	$1.78	$17.80
	$1.19	$119.00
	$0.941	$470.50
	$0.86	$860.00
Full Reel (Order in multiples of 3000)
	$0.773	$2,319.00
	$0.749	$4,494.00
	$0.739	$17,736.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPAK SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	4.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	54 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	48 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	60 S
Product Type:	MOSFETs
Rise Time:	9 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	25 ns

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Datasheet

SIR4606DP-T1-GE3 Datasheet

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CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

N-Channel 30-45V (D-S) MOSFETs

Vishay N-Channel 30-45V (D-S) MOSFETs are TrenchFET® Gen IV power MOSFETs with very low RDS Qg figure-of-merit (FOM). The devices are tuned for the lowest RDS - Qoss FOM with a top-side cooling feature that provides an additional venue for thermal transfers. The MOSFETs are 100% Rg and UIS tested.