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SI8802DB-T2-E1

Name: Vishay SI8802DB-T2-E1
Brand: Vishay / Siliconix
SKU: 781-SI8802DB-T2-E1
Price: 1.01 CAD
Availability: InStock

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Mouser #:

781-SI8802DB-T2-E1

Mfr. #:

SI8802DB-T2-E1

Mfr.:

Vishay / Siliconix

Description:

MOSFETs 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8

Datasheet:

SI8802DB-T2-E1 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SI8802DB-T2-E1

In Stock: 5,917

Stock:: 5,917 Can Ship Immediately

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Factory Lead-Time:: 2 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.01	$1.01
	$0.623	$6.23
	$0.40	$40.00
	$0.304	$152.00
	$0.273	$273.00
Full Reel (Order in multiples of 3000)
	$0.214	$642.00
	$0.194	$1,164.00
	$0.181	$1,629.00
	$0.177	$4,248.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	MicroFoot-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	8 V
Id - Continuous Drain Current:	3.5 A
Rds On - Drain-Source Resistance:	54 mOhms
Vgs - Gate-Source Voltage:	- 5 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	350 mV
Qg - Gate Charge:	4.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	900 mW
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	13 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	SI8
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	5 ns
Unit Weight:	45.104 mg

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Datasheet

SI8802DB-T2-E1 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

CAHTS:: 8541210000
CNHTS:: 8541210000
TARIC:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

Si88xx 8V TrenchFET® Power MOSFETs

Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chip-scale package, in addition to the first n- and p-channel devices to offer on-resistance (R_DS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package that occupies up to 36 % less board space than the next smallest chip-scale devices, yet offer comparable − and even lower − on-resistance (R_DS(on)).

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (R_DS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.