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SI8466EDB-T2-E1

Name: Vishay SI8466EDB-T2-E1
Brand: Vishay Semiconductors
SKU: 78-SI8466EDB-T2-E1
Price: 1.04 CAD
Availability: InStock

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Mouser #:

78-SI8466EDB-T2-E1

Mfr. #:

SI8466EDB-T2-E1

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 8V Vds 5V Vgs MICRO FOOT 1 x 1

Datasheet:

SI8466EDB-T2-E1 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SI8466EDB-T2-E1

In Stock: 659

Stock:: 659

Can Ship Immediately

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On Order:: 3,000

Expected 2026-03-18
Factory Lead-Time:: 5

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.04	$1.04
	$0.662	$6.62
	$0.436	$43.60
	$0.339	$169.50
	$0.309	$309.00
Full Reel (Order in multiples of 3000)
	$0.267	$801.00
	$0.246	$1,476.00
	$0.243	$2,187.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	MicroFoot-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	8 V
Id - Continuous Drain Current:	5.4 A
Rds On - Drain-Source Resistance:	43 mOhms
Vgs - Gate-Source Voltage:	- 5 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	350 mV
Qg - Gate Charge:	13 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.8 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	SI8
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	40 mg

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Datasheet

SI8466EDB-T2-E1 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

CAHTS:: 8541290000
CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (R_DS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.