It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SI7846DP-T1-GE3

Name: Vishay SI7846DP-T1-GE3
Brand: Vishay / Siliconix
SKU: 781-SI7846DP-GE3
Price: 5.45 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

781-SI7846DP-GE3

Mfr. #:

SI7846DP-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs 150V Vds 20V Vgs PowerPAK SO-8

Datasheet:

SI7846DP-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about Vishay / Siliconix SI7846DP-T1-GE3

In Stock: 2,969

Stock:: 2,969 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$5.45	$5.45
	$3.56	$35.60
	$2.55	$255.00
	$2.24	$1,120.00
	$1.98	$1,980.00
Full Reel (Order in multiples of 3000)
	$1.81	$5,430.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPAK-SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	24.5 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	30 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.9 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	18 S
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	SI7
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	12 ns
Part # Aliases:	SI7846DP-GE3
Unit Weight:	506.600 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SI7846DP-T1-GE3 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

CAHTS:: 8541210000
CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

SI78 N-Channel (D-S) MOSFETs

Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs are available in a new low thermal resistance PowerPAK^® package with a low 1.07mm profile. These N-Channel (D-S) MOSFETs are PWM optimized, 100% R_g tested, halogen-free, and RoHS compliant. The SI78 MOSFETs are used in DC/DC converters, primary side switches for DC/DC applications, and synchronous rectifiers.