SCT4036DWAHRTL

ROHM Semiconductor
755-SCT4036DWAHRTL
SCT4036DWAHRTL

Mfr.:

Description:
SiC MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

In Stock: 700

Stock:
700 Can Ship Immediately
Factory Lead-Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$17.92 $17.92
$12.60 $126.00
$10.73 $1,073.00
Full Reel (Order in multiples of 1000)
$8.76 $8,760.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC MOSFETs
SMD/SMT
TO-263-7LA
N-Channel
1 Channel
750 V
38 A
47 mOhms
- 4 V, + 21 V
4.8 V
72 nC
+ 175 C
115 W
Enhancement
AEC-Q101
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 12 ns
Forward Transconductance - Min: 10 S
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: Power MOSFETs
Product Type: SiC MOSFETS
Rise Time: 21 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC Power MOSFET
Typical Turn-Off Delay Time: 36 ns
Typical Turn-On Delay Time: 6.5 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

USHTS:
8541100080
ECCN:
EAR99

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.