(800) 346-6873

Part of the TTI Family of Specialists Contact Mouser (Kitchener) (800) 346-6873 Feedback

Change Location

In Stock

RoHS

Mfr.	Mfr. #:	Qty	Ext Total

View Cart

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

SCT4036DEC11

Name: ROHM Semiconductor SCT4036DEC11
Brand: ROHM Semiconductor
SKU: 755-SCT4036DEC11
Price: 20.74 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

755-SCT4036DEC11

Mfr. #:

SCT4036DEC11

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT4036DEC11 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about ROHM Semiconductor SCT4036DEC11

In Stock: 450

Stock:: 450 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$20.74	$20.74
	$12.59	$125.90
	$10.80	$1,080.00
	$10.42	$4,689.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
Mounting Style:	Through Hole
Package / Case:	TO-247N-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	42 A
Rds On - Drain-Source Resistance:	47 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	72 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	136 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	11 ns
Forward Transconductance - Min:	10 S
Packaging:	Tube
Product:	Power MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	22 ns
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC Power MOSFET
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	13 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SCT4036DEC11 Datasheet

This functionality requires JavaScript to be enabled.

USHTS:: 8541100080
ECCN:: EAR99

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.