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SCT4013DLLTRDC

Name: ROHM Semiconductor SCT4013DLLTRDC
Brand: ROHM Semiconductor
SKU: 755-SCT4013DLLTRDC
Price: 52.79 CAD
Availability: InStock

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Mouser #:

755-SCT4013DLLTRDC

Mfr. #:

SCT4013DLLTRDC

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs TOLL 750V 120A SIC

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT4013DLLTRDC Datasheet (PDF)

ECAD Model:

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Learn more about ROHM Semiconductor SCT4013DLLTRDC

In Stock: 1,000

Stock:: 1,000 Can Ship Immediately

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Factory Lead-Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$52.79	$52.79
	$40.36	$403.60
	$36.33	$3,633.00
Full Reel (Order in multiples of 2000)
	$34.35	$68,700.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
Mounting Style:	SMD/SMT
Package / Case:	TOLL-9
Transistor Polarity:	N Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	120 A
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	170 nC
Maximum Operating Temperature:	+ 175 V
Pd - Power Dissipation:	405 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	17 ns
Forward Transconductance - Min:	32 S
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFET
Product Type:	SiC MOSFETS
Rise Time:	32 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	82 ns

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Datasheet

SCT4013DLLTRDC Datasheet (PDF)

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USHTS:: 8541100080
ECCN:: EAR99

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.