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SCT040HU120G3AG

Name: STMicroelectronics SCT040HU120G3AG
Brand: STMicroelectronics
SKU: 511-SCT040HU120G3AG
Price: 20.74 CAD
Availability: InStock

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Mouser #:

511-SCT040HU120G3AG

Mfr. #:

SCT040HU120G3AG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT040HU120G3AG Datasheet (PDF)

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Learn more about STMicroelectronics SCT040HU120G3AG

In Stock: 1,011

Stock:: 1,011

Can Ship Immediately

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On Order:: 600
Factory Lead-Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 600)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$20.74	$20.74
	$14.52	$145.20
	$12.80	$1,280.00
Full Reel (Order in multiples of 600)
	$12.56	$7,536.00
	$10.85	$13,020.00
2,400	Quote

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	HU3PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	72 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	54 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	19.2 ns
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	21.1 ns
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	36.3 ns
Typical Turn-On Delay Time:	12.9 ns

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Datasheet

SCT040HU120G3AG Datasheet (PDF)

PCN

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = +200°C), and a very fast and robust intrinsic body diode.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.