SCS208AGC17

ROHM Semiconductor
755-SCS208AGC17
SCS208AGC17

Mfr.:

Description:
SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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In Stock: 1,701

Stock:
1,701 Can Ship Immediately
Factory Lead-Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1701 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$4.50 $4.50
$3.39 $33.90
$3.38 $3,380.00
2,000 Quote

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220ACG-2
Single
8 A
650 V
1.55 V
30 A
160 uA
+ 175 C
Tube
Brand: ROHM Semiconductor
Pd - Power Dissipation: 68 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
Part # Aliases: SCS208AG
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Attributes selected: 0

Datasheet

Specification Sheets

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CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100199
BRHTS:
85411099
ECCN:
EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

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