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RJ1L10BBGTL1

Name: ROHM Semiconductor RJ1L10BBGTL1
Brand: ROHM Semiconductor
SKU: 755-RJ1L10BBGTL1
Price: 10.42 CAD
Availability: InStock

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Mouser #:

755-RJ1L10BBGTL1

Mfr. #:

RJ1L10BBGTL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Nch 60V 240A, TO-263AB, Power MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RJ1L10BBGTL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RJ1L10BBGTL1

In Stock: 156

Stock:: 156

Can Ship Immediately

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On Order:: 800

Expected 2026-06-18
Factory Lead-Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$10.42	$10.42
	$7.03	$70.30
	$5.19	$519.00
	$4.85	$2,425.00
Full Reel (Order in multiples of 800)
	$4.85	$3,880.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-263AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	240 A
Rds On - Drain-Source Resistance:	1.85 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	160 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	192 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	140 ns
Forward Transconductance - Min:	64 S
Product Type:	MOSFETs
Rise Time:	31 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	230 ns
Typical Turn-On Delay Time:	49 ns

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Datasheet

RJ1L10BBGTL1 Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RJ1x10BBG Power MOSFETs

ROHM Semiconductor RJ1x10BBG Power MOSFETs are N-channel power MOSFETs featuring low on-resistance and a high power package. The RJ1G10BBG and RJ1L10BBG power MOSFETs have a drain-source voltage of 40V and 60V, a continuous drain current of ±280A and ±240A, respectively, and a power dissipation of 192W. The RJ1x10BBG power MOSFETs are RoHS compliant. These power MOSFETs feature lead-free plating, are halogen-free, and 100% Rg and UIS tested. The RJ1x10BBG power MOSFETs operate within the -55°C to 150°C temperature range. Typical applications include switching, motor drives, and DC/DC converters.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.