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RH7G04BBJFRATCB

Name: ROHM Semiconductor RH7G04BBJFRATCB
Brand: ROHM Semiconductor
SKU: 755-RH7G04BBJFRATCB
Price: 3.63 CAD
Availability: InStock

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Mouser #:

755-RH7G04BBJFRATCB

Mfr. #:

RH7G04BBJFRATCB

Mfr.:

ROHM Semiconductor

Description:

MOSFETs DFN3333 P-CH 40V 40A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RH7G04BBJFRATCB Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RH7G04BBJFRATCB

In Stock: 2,400

Stock:: 2,400 Can Ship Immediately

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Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$3.63	$3.63
	$2.33	$23.30
	$1.61	$161.00
	$1.36	$680.00
	$1.21	$1,210.00
Full Reel (Order in multiples of 3000)
	$1.03	$3,090.00
	$1.02	$6,120.00
	$1.01	$9,090.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DFN-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	11.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	97 ns
Forward Transconductance - Min:	14 S
Product Type:	MOSFETs
Rise Time:	24 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	175 ns
Typical Turn-On Delay Time:	14 ns

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Datasheet

RH7G04BBJFRATCB Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive 40A & 80A Power MOSFETs

ROHM Semiconductor Automotive 40A and 80A Power MOSFETs are N-channel and P-channel devices. These AEC-Q101 qualified MOSFETs feature low on-resistance, ±80A/±160A pulsed drain current, and up to 142W power dissipation. The 40A and 80A power MOSFETs operate from -55°C to 175°C temperature range and are 100% avalanche tested. These power MOSFETs are ideal for ADAS, automotive, and lighting applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.