(800) 346-6873

Part of the TTI Family of Specialists Contact Mouser (Kitchener) (800) 346-6873 Feedback

Change Location

In Stock

RoHS

Mfr.	Mfr. #:	Qty	Ext Total

View Cart

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

RD3G07BBGTL1

Name: ROHM Semiconductor RD3G07BBGTL1
Brand: ROHM Semiconductor
SKU: 755-RD3G07BBGTL1
Price: 5.02 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

755-RD3G07BBGTL1

Mfr. #:

RD3G07BBGTL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Nch, 40V(Vdss), 70A(Id), (4.5V Drive)

Datasheet:

RD3G07BBGTL1 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about ROHM Semiconductor RD3G07BBGTL1

In Stock: 2,480

Stock:: 2,480 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$5.02	$5.02
	$3.58	$35.80
	$2.55	$255.00
	$2.35	$1,175.00
	$2.29	$2,290.00
Full Reel (Order in multiples of 2500)
	$2.04	$5,100.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	150 A
Rds On - Drain-Source Resistance:	2.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	89 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	62 ns
Forward Transconductance - Min:	27 S
Product Type:	MOSFETs
Rise Time:	21 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	90 ns
Typical Turn-On Delay Time:	22 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

RD3G07BBGTL1 Datasheet

Specification Sheets

Datasheet - Chinese (English language)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

Medium Power MOSFETs

ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. These MOSFETs feature a broad lineup with compact, high-power, and complex types to meet various needs. ROHM Medium Power MOSFETs come in high-power small mold packages, and typical applications are for DC/DC converters and load switches.