It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

QH8KE5TCR

Name: ROHM Semiconductor QH8KE5TCR
Brand: ROHM Semiconductor
SKU: 755-QH8KE5TCR
Price: 1.61 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

755-QH8KE5TCR

Mfr. #:

QH8KE5TCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs 100V 2.0A, Dual Nch+Nch, TSMT8, Power MOSFET: The Power MOSFET QH8KE5 is suitable for switching power supply and motor drive.

Datasheet:

QH8KE5TCR Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about ROHM Semiconductor QH8KE5TCR

In Stock: 4,452

Stock:: 4,452 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$1.61	$1.61
	$1.00	$10.00
	$0.657	$65.70
	$0.508	$254.00
	$0.459	$459.00
Full Reel (Order in multiples of 3000)
	$0.446	$1,338.00
	$0.366	$2,196.00
	$0.341	$3,069.00
	$0.339	$8,136.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TSMT-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	202 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	2.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Dual
Fall Time:	5 ns
Forward Transconductance - Min:	1.3 S
Product Type:	MOSFETs
Rise Time:	6 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	6 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

QH8KE5TCR Datasheet

Specification Sheets

Datasheet - Chinese (English language)

This functionality requires JavaScript to be enabled.

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

QH8K Dual Nch+Nch Small Signal MOSFETs

ROHM Semiconductor QH8K Dual Nch+Nch Small Signal MOSFETs support 40V, 60V, or 100V withstand voltages. This series is designed for 24V input equipment such as factory automation equipment, and motors mounted on base stations (cooling fans). The QH8K devices consist of a low on-resistance Nch MOSFET, which is reduced by 58% compared to conventional ROHM products. This results in low power consumption of components. These MOSFETs come in a small, surface-mount TSMT8 package with eight terminals and Pb-free plating. ROHM Semiconductor QH8K Dual Nch+Nch Small Signal MOSFETs are ideal for switching and motor drive applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.