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MSC030SMB120B4N

Name: Microchip MSC030SMB120B4N
Brand: Microchip Technology
SKU: 579-MSC030SMB120B4N
Price: 18.09 CAD
Availability: InStock

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Mouser #:

579-MSC030SMB120B4N

Mfr. #:

MSC030SMB120B4N

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1200 V 30 mOhm TO-247-4 Notch

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

MSC030SMB120B4N Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Microchip Technology MSC030SMB120B4N

In Stock: 115

Stock:: 115 Can Ship Immediately

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Factory Lead-Time:: 1 Week Estimated factory production time for quantities greater than shown.

Quantities greater than 115 will be subject to minimum order requirements.

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Unit Price:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$18.09	$18.09
	$16.68	$500.40
	$14.52	$1,742.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	69 A
Rds On - Drain-Source Resistance:	40 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 21 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	91 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	310 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Fall Time:	10 ns
Product Type:	SiC MOSFETS
Rise Time:	16 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	18 ns

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Datasheet

MSC030SMB120B4N Datasheet (PDF)

PCN

Product Change Notification 2026-1-8 (PDF)

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ECCN:: EAR99

1200V SIC MOSFETs

Microchip Technology 1200V SIC MOSFETs offer high efficiency in a lighter, more compact solution. The devices supply low internal gate resistance (ESR), resulting in a fast switching speed. The MOSFETs are simple to drive and easy to parallel, with improved thermal capabilities and lower switching losses.