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MRFE6VP5600HR5

Name: NXP MRFE6VP5600HR5
Brand: NXP Semiconductors
SKU: 841-MRFE6VP5600HR5
Price: 1134.9 CAD
Availability: InStock

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Mouser #:

841-MRFE6VP5600HR5

Mfr. #:

MRFE6VP5600HR5

Mfr.:

NXP Semiconductors

Description:

RF MOSFET Transistors VHV6 600W 50V NI1230H

Datasheet:

MRFE6VP5600HR5 Datasheet (PDF)

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Learn more about NXP Semiconductors MRFE6VP5600HR5

In Stock: 50

Stock:: 50 Can Ship Immediately

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Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 50)

Cut Tape

MouseReel™ (+$8.50)

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1,134.90	$1,134.90
	$996.08	$9,960.80
	$990.52	$24,763.00
Full Reel (Order in multiples of 50)
	$941.38	$47,069.00
100	Quote

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	2 A
Vds - Drain-Source Breakdown Voltage:	130 V
Operating Frequency:	1.8 MHz to 600 MHz
Gain:	25 dB
Output Power:	600 W
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package / Case:	NI-1230
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	NXP Semiconductors
Pd - Power Dissipation:	1.667 kW
Product Type:	RF MOSFET Transistors
Series:	MRFE6VP5600H
Factory Pack Quantity:	50
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	+ 10 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Part # Aliases:	935310538178
Unit Weight:	13.155 g

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Datasheet

MRFE6VP5600HR5 Datasheet (PDF)

CAHTS:: 8541290000
CNHTS:: 8504409190
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs

NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace, and radio/land-mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 V_SWR, a 50V_DC, 230MHz at all phase angles.