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MR4A16BUYS45

Name: Everspin Technologies MR4A16BUYS45
Brand: Everspin Technologies
SKU: 936-MR4A16BUYS45
Price: 116.92 CAD
Availability: InStock

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Mouser #:

936-MR4A16BUYS45

Mfr. #:

MR4A16BUYS45

Mfr.:

Everspin Technologies

Description:

MRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM

Datasheet:

MR4A16BUYS45 Datasheet (PDF)

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More Information

Learn more about Everspin Technologies MR4A16BUYS45

In Stock: 279

Stock:: 279 Can Ship Immediately

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Factory Lead-Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$116.92	$116.92
	$107.90	$1,079.00
	$104.36	$2,609.00
	$101.74	$5,087.00
	$99.01	$10,693.08
216	Quote

Alternative Packaging

Mfr. Part #:

MR4A16BUYS45R

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$98.30

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Everspin Technologies
Product Category:	MRAM
RoHS:
Package / Case:	TSOP-II-54
Interface Type:	Parallel
Memory Size:	16 Mbit
Organization:	1 M x 16
Data Bus Width:	16 bit
Access Time:	45 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	60 mA, 152 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MR4A16B
Packaging:	Tray
Brand:	Everspin Technologies
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
Factory Pack Quantity:	108
Subcategory:	Memory & Data Storage
Tradename:	Parallel I/O (x16)
Unit Weight:	9.210 g

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Datasheet

MR4A16BUYS45 Datasheet (PDF)

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CAHTS:: 8542320090
CNHTS:: 8542329090
USHTS:: 8542320071
MXHTS:: 8542320201
ECCN:: EAR99

MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.