MASTERGAN4LTR

STMicroelectronics
511-MASTERGAN4LTR
MASTERGAN4LTR

Mfr.:

Description:
Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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Datasheet:
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In Stock: 1,367

Stock:
1,367 Can Ship Immediately
Factory Lead-Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1367 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$8.93 $8.93
$6.85 $68.50
$6.32 $158.00
$5.75 $575.00
$5.47 $1,367.50
$5.32 $2,660.00
$5.18 $5,180.00
Full Reel (Order in multiples of 3000)
$4.90 $14,700.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge
SMD/SMT
QFN-31
4 Output
12 A
4.75 V
9.5 V
Non-Inverting
- 40 C
+ 125 C
MASTERGAN
Reel
Cut Tape
Brand: STMicroelectronics
Maximum Turn-Off Delay Time: 45 ns
Maximum Turn-On Delay Time: 45 ns
Moisture Sensitive: Yes
Operating Supply Current: 6.5 A
Pd - Power Dissipation: 40 mW
Product Type: Gate Drivers
Propagation Delay - Max: 70 ns
Rds On - Drain-Source Resistance: 495 mOhms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
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Attributes selected: 0

Datasheet

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CAHTS:
8542390000
CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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