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MASTERGAN2

Name: STMicroelectronics MASTERGAN2
Brand: STMicroelectronics
SKU: 511-MASTERGAN2
Price: 15.77 CAD
Availability: InStock

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Mouser #:

511-MASTERGAN2

Mfr. #:

MASTERGAN2

Mfr.:

STMicroelectronics

Description:

Gate Drivers High power density 600V Half bridge driver with two enhancement mode GaN HEMTs

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Datasheet:

MASTERGAN2 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics MASTERGAN2

In Stock: 172

Stock:: 172 Can Ship Immediately

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Factory Lead-Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$15.77	$15.77
	$12.48	$124.80
	$11.66	$291.50
	$10.77	$1,077.00
	$8.11	$2,027.50
2,500	Quote

Alternative Packaging

Mfr. Part #:

MASTERGAN2TR

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$9.68

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Number of Drivers:	2 Driver
Number of Outputs:	1 Output
Output Current:	10 A
Supply Voltage - Min:	3.3 V
Supply Voltage - Max:	15 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MASTERGAN
Packaging:	Tray
Brand:	STMicroelectronics
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Factory Pack Quantity:	1560
Subcategory:	PMIC - Power Management ICs
Unit Weight:	150 mg

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Datasheet

MASTERGAN2 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an R_DS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.