IXSA110N65L2-7TR

IXYS
747-IXSA110N65L2-7TR
IXSA110N65L2-7TR

Mfr.:

Description:
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about IXYS IXSA110N65L2-7TR

In Stock: 900

Stock:
900 Can Ship Immediately
Factory Lead-Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 800)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$17.24 $17.24
$13.16 $131.60
$10.97 $1,097.00
$9.58 $4,790.00
Full Reel (Order in multiples of 800)
$7.98 $6,384.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7L
N-Channel
1 Channel
650 V
111 A
33 mOhms
- 5 V, + 20 V
4.5 V
125 nC
- 55 C
+ 175 C
600 W
Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 11.5 ns
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 23.4 ns
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35.1 ns
Typical Turn-On Delay Time: 13 ns
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Datasheet

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IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).

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