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IS29GL128-70SLEB

Name: ISSI IS29GL128-70SLEB
Brand: ISSI
SKU: 870-IS29GL128-70SLEB
Price: 11.14 CAD
Availability: InStock

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Mouser #:

870-IS29GL128-70SLEB

Mfr. #:

IS29GL128-70SLEB

Mfr.:

ISSI

Description:

NOR Flash 128Mb, 56 pin TSOP, 3V, RoHS, Lowest Sector Protected

Datasheet:

IS29GL128-70SLEB Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ISSI IS29GL128-70SLEB

In Stock: 131

Stock:: 131 Can Ship Immediately

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Factory Lead-Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$11.14	$11.14

Alternative Packaging

Mfr. Part #:

IS29GL128-70SLEB-TR

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$10.74

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	NOR Flash
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	TSOP-56
Series:	IS29GL128
Memory Size:	128 Mbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	45 mA
Interface Type:	Parallel
Organization:	16 M x 8/8 M x 16
Data Bus Width:	8 bit/16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Brand:	ISSI
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	70 ns
Factory Pack Quantity:	96
Subcategory:	Memory & Data Storage

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Datasheet

IS29GL128-70SLEB Datasheet (PDF)

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CNHTS:: 8542329090
USHTS:: 8542320071
TARIC:: 8542326100
ECCN:: 3A991.b.1.a

SPI NOR Flash ICs

ISSI SPI NOR Flash ICs are low voltage Serial Peripheral Interface NOR Flash Memory Devices offering features such as Double Data Rate (DTR/DDR) interface modes, SFDP support, and 2-cycle instruction input (QPI mode).

IS29GL128 NOR Flash Memory Devices

ISSI IS29GL128 NOR Flash Memory Devices offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. These memory devices feature a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation. The IS29GL128 memory devices thus offer faster effective programming time than standard programming algorithms. These memory devices are ideal for embedded applications that require higher density, better performance, and low power consumption.