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IPW95R310PFD7XKSA1

Name: Infineon IPW95R310PFD7XKSA1
Brand: Infineon Technologies
SKU: 726-IPW95R310PFD7XKS
Price: 5.31 CAD
Availability: OutOfStock

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Mouser #:

726-IPW95R310PFD7XKS

Mfr. #:

IPW95R310PFD7XKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs LOW POWER_NEW

Datasheet:

IPW95R310PFD7XKSA1 Datasheet (PDF)

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Availability

Stock:: 0

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On Order:: 1,200

Expected 2026-03-06
Factory Lead-Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$5.31	$5.31
	$5.10	$51.00
	$2.86	$71.50
	$2.38	$238.00
	$2.27	$544.80
	$1.90	$912.00
	$1.75	$2,100.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	950 V
Id - Continuous Drain Current:	17.5 A
Rds On - Drain-Source Resistance:	310 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	61 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	10 ns
Factory Pack Quantity:	240
Subcategory:	Transistors
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	13 ns
Part # Aliases:	SP005547006

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Datasheet

IPW95R310PFD7XKSA1 Datasheet (PDF)

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).