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IPB339N20NM6ATMA1

Name: Infineon IPB339N20NM6ATMA1
Brand: Infineon Technologies
SKU: 726-IPB339N20NM6ATMA
Price: 5.6 CAD
Availability: InStock

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Mouser #:

726-IPB339N20NM6ATMA

Mfr. #:

IPB339N20NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >150 - 400V

Lifecycle:

New At Mouser

Datasheet:

IPB339N20NM6ATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IPB339N20NM6ATMA1

In Stock: 1,027

Stock:: 1,027 Can Ship Immediately

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Factory Lead-Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$5.60	$5.60
	$3.83	$38.30
	$3.01	$301.00
	$2.79	$1,395.00
Full Reel (Order in multiples of 1000)
	$2.36	$2,360.00
	$2.31	$4,620.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-263-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	39 A
Rds On - Drain-Source Resistance:	33.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	15.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	7.3 S
Product Type:	MOSFETs
Rise Time:	14 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	IPB339N20NM6 SP005562858

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Datasheet

IPB339N20NM6ATMA1 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

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Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next-generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilizes thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimized for synchronous rectification. These MOSFETs are available in various voltage nodes, including 40V, 100V, 120V, 135V, 150V, and 200V.

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Infineon Technologies OptiMOS™ 6 200V Power MOSFETs are N-channel normal level MOSFETs available in PG-TO263-3, PG-TO220-3, and PG-HDSOP-16 packages. These MOSFETs feature excellent gate charge x R_DS(on) product (FOM), very low reverse recovery charge (Q_rr), and low on‑resistance R_DS(on). The OptiMOS™ 6 200V MOSFETs operate at 175°C temperature. These MOSFETs are halogen‑free according to IEC61249‑2‑21 and Moisture Sensitivity Level (MSL 1) classified according to J‑STD-020 standards. The OptiMOS™ 6 200V MOSFETs are ideal for renewables, motor control, audio amplifiers, and industrial applications.