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IPA95R450PFD7XKSA1

Name: Infineon IPA95R450PFD7XKSA1
Brand: Infineon Technologies
SKU: 726-IPA95R450PFD7XKS
Price: 4.16 CAD
Availability: InStock

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Mouser #:

726-IPA95R450PFD7XKS

Mfr. #:

IPA95R450PFD7XKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs LOW POWER_NEW

Datasheet:

IPA95R450PFD7XKSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPA95R450PFD7XKSA1

In Stock: 500

Stock:: 500 Can Ship Immediately

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Factory Lead-Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$4.16	$4.16
	$2.06	$20.60
	$1.89	$189.00
	$1.52	$760.00
	$1.30	$1,300.00
	$1.26	$6,300.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220FP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	950 V
Id - Continuous Drain Current:	7.2 A
Rds On - Drain-Source Resistance:	450 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4.7 ns
Product Type:	MOSFETs
Rise Time:	8.7 ns
Factory Pack Quantity:	500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	IPA95R450PFD7 SP005547011

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Datasheet

IPA95R450PFD7XKSA1 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).