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IKW25N120T2

Name: Infineon IKW25N120T2
Brand: Infineon Technologies
SKU: 726-IKW25N120T2
Price: 8.52 CAD
Availability: InStock

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Mouser #:

726-IKW25N120T2

Mfr. #:

IKW25N120T2

Mfr.:

Infineon Technologies

Description:

IGBTs LOW LOSS DuoPack 1200V 25A

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IKW25N120T2 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IKW25N120T2

In Stock: 240

Stock:: 240

Can Ship Immediately

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On Order:: 240

Expected 2026-03-06

480

Expected 2026-09-17
Factory Lead-Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Ext. Price:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$8.52	$8.52
	$5.28	$52.80
	$4.39	$439.00
	$3.62	$1,737.60

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package / Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.7 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	50 A
Pd - Power Dissipation:	349 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	Trenchstop IGBT4
Packaging:	Tube
Brand:	Infineon Technologies
Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKW25N12T2XK SP000244960 IKW25N120T2FKSA1
Unit Weight:	38 g

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Datasheet

IKW25N120T2 Datasheet (PDF)

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

1200V Gen8 IGBTs

Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving applications. The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. Infineon 1200V Gen8 IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction temperature up to +175°C.