It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IAUZN10S7N078ATMA1

Name: Infineon IAUZN10S7N078ATMA1
Brand: Infineon Technologies
SKU: 726-IAUZN10S7N078ATM
Price: 3.44 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

726-IAUZN10S7N078ATM

Mfr. #:

IAUZN10S7N078ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 Power-Transistor

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IAUZN10S7N078ATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about Infineon Technologies IAUZN10S7N078ATMA1

In Stock: 3,492

Stock:: 3,492 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$3.44	$3.44
	$2.20	$22.00
	$1.52	$152.00
	$1.29	$645.00
	$1.08	$1,080.00
	$0.995	$2,487.50
Full Reel (Order in multiples of 5000)
	$0.898	$4,490.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	76 A
Rds On - Drain-Source Resistance:	7.8 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	22.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	94 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	3.6 ns
Series:	OptiMOS 7
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	10.4 ns
Typical Turn-On Delay Time:	4.7 ns
Part # Aliases:	IAUZN10S7N078 SP006030405

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IAUZN10S7N078ATMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 7 Automotive Power MOSFETs

Infineon Technologies is introducing its leading OptiMOS™ 7 Automotive Power MOSFETs technology with remarkably low on-state resistance, reduced switching losses, and enhanced ruggedness. OptiMOS 7 redefines the landscape of automotive power MOSFETs. The OptiMOS 7 MOSFET technology from Infineon establishes a new standard for automotive applications, allowing performance and efficiency while addressing the challenges of tomorrow's automotive systems.

OptiMOS™ 7 80V Automotive Power MOSFETs

Infineon Technologies OptiMOS™ 7 80V Automotive Power MOSFETs are built with Infineon’s leading-edge, power semiconductor technology. These MOSFETs are designed specifically for the high performance, quality, and robustness needed for demanding automotive applications. The OptiMOS™ 7 80V MOSFETs operate with a ±20V_GS gate source voltage and a temperature range of -55°C to 175°C. These MOSFETs are offered in top-side cooled SSO10T 5x7mm2 SMD package. The SSO10T package helps users achieve advancements in cooling and power density. The 80V power MOSFETs are MSL-1 rated, RoHS compliant, and 100% avalanche tested. These power MOSFETs are ideal for general automotive applications.