GCMX005A120B3B1P

SemiQ
148-GCMX005A120B3B1P
GCMX005A120B3B1P

Mfr.:

Description:
MOSFET Modules SiC 1200V 5mohm MOSFET Half-Bridge Module

Datasheet:
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Learn more about SemiQ GCMX005A120B3B1P

In Stock: 34

Stock:
34 Can Ship Immediately
Factory Lead-Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$205.87 $205.87
$179.57 $1,795.70
$172.58 $17,258.00
Full Reel (Order in multiples of 40)
$179.57 $7,182.80
500 Quote

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
N-Channel
1.2 kV
383 A
4.4 mOhms
- 5 V, + 20 V
1.8 V
- 40 C
+ 175 C
1.154 kW
GCMX
Reel
Cut Tape
Brand: SemiQ
Fall Time: 29 ns
Product Type: MOSFET Modules
Rise Time: 22 ns
Factory Pack Quantity: 40
Subcategory: Discrete and Power Modules
Type: Half-Bridge
Typical Turn-Off Delay Time: 114 ns
Typical Turn-On Delay Time: 51 ns
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Attributes selected: 0

Datasheet

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

GCMX 1200V SiC MOSFET Half-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance, and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems, and high-voltage DC-to-DC converters.

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