GCMX003A120S3B1-N

SemiQ
148-GCMX003A120S3B1N
GCMX003A120S3B1-N

Mfr.:

Description:
MOSFET Modules 1200V, 3mohm, 625A SiC MOSFET Half Bridge Module

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about SemiQ GCMX003A120S3B1-N

In Stock: 10

Stock:
10 Can Ship Immediately
Factory Lead-Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$404.21 $404.21
$344.50 $3,445.00
105 Quote

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
S3
N-Channel
2 Channel
1.2 kV
625 A
5.5 mOhms
- 5 V, + 20 V
4 V
- 40 C
+ 150 C
2.113 kW
GCMX
Bulk
Brand: SemiQ
Fall Time: 28 ns
Height: 30 mm
Length: 106.4 mm
Product: Modules
Product Type: MOSFET Modules
Rise Time: 21 n
Factory Pack Quantity: 15
Subcategory: Discrete and Power Modules
Type: Half Bidge Module
Typical Turn-Off Delay Time: 138 ns
Typical Turn-On Delay Time: 79 ns
Vf - Forward Voltage: 4 V
Width: 61.4 mm
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Attributes selected: 0

Datasheet

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

GCMX 1200V SiC MOSFET Half-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance, and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems, and high-voltage DC-to-DC converters.

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