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FDMS86181

Name: onsemi FDMS86181
Brand: onsemi
SKU: 512-FDMS86181
Price: 5.53 CAD
Availability: OutOfStock

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See Product Specifications

Mouser #:

512-FDMS86181

Mfr. #:

FDMS86181

Mfr.:

onsemi

Description:

MOSFETs 100V/20V N-Chnl Power Trench MOSFET

Datasheet:

FDMS86181 Datasheet

ECAD Model:

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More Information

Learn more about onsemi FDMS86181

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 8,406

Expected 2026-07-31

9,000

Expected 2026-08-28
Factory Lead-Time:: 45

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$5.53	$5.53
	$3.61	$36.10
	$2.53	$253.00
	$2.22	$1,110.00
	$2.13	$2,130.00
Full Reel (Order in multiples of 3000)
	$1.92	$5,760.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	Power-56-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	124 A
Rds On - Drain-Source Resistance:	12 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	6 ns
Forward Transconductance - Min:	116 S
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	FDMS86181
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	90 mg

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Datasheet

FDMS86181 Datasheet

PCN

Compliance Codes

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Philippines
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

Shielded Gate PowerTrench® MOSFETs

onsemi Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDS_ON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These devices have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. The power density of these MOSFETs allows wider MOSFET de-rating. These devices are 100% UIL tested and are available in an MSL1 robust package design.