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DMG4800LSD-13

Name: Diodes Incorporated DMG4800LSD-13
Brand: Diodes Incorporated
SKU: 621-DMG4800LSD-13
Price: 1.29 CAD
Availability: InStock

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Mouser #:

621-DMG4800LSD-13

Mfr. #:

DMG4800LSD-13

Mfr.:

Diodes Incorporated

Description:

MOSFETs Dual N-Ch 30V VDSS 25 Vgss 42A IDM

Datasheet:

DMG4800LSD-13 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated DMG4800LSD-13

In Stock: 1,784

Stock:: 1,784

Can Ship Immediately

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On Order:: 7,500

Expected 2026-03-06

7,500

Expected 2026-04-22
Factory Lead-Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.29	$1.29
	$0.801	$8.01
	$0.52	$52.00
	$0.398	$199.00
	$0.359	$359.00
Full Reel (Order in multiples of 2500)
	$0.305	$762.50
	$0.276	$1,380.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOIC-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	7.5 A
Rds On - Drain-Source Resistance:	16 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Qg - Gate Charge:	8.56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.17 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Dual
Fall Time:	8.55 ns
Product Type:	MOSFETs
Rise Time:	4.5 ns
Series:	DMG4800
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	26.33 ns
Typical Turn-On Delay Time:	5.03 ns
Unit Weight:	750 mg

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Filter Document:

Datasheet

DMG4800LSD-13 Datasheet (PDF)

PCN

PRODUCT CHANGE NOTICE (PDF)

Environmental Compliance (PDF)

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMG44x & DMG48x Enhancement Mode MOSFETs

The Diodes Inc. DMG44x and DMG48x Enhancement Mode MOSFETs are high-reliability N-channel enhancement mode MOSFETs. These DMG44x and DMG48x enhancement mode MOSFETs feature low on-resistance, low input capacitance, fast switching speed, and low input/output leakage.