CG2H40045F

Name: MACOM CG2H40045F
Brand: MACOM
SKU: 941-CG2H40045F
Price: 565.63 CAD
Availability: InStock

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Mouser #:

941-CG2H40045F

Mfr. #:

CG2H40045F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT DC-4.0GHz, 45 Watt

Datasheet:

CG2H40045F Datasheet (PDF)

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Learn more about MACOM CG2H40045F

In Stock: 640

Stock:: 640 Can Ship Immediately

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Factory Lead-Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$565.63	$565.63
	$482.84	$4,828.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package / Case:	440193
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	6 A
Vgs th - Gate-Source Threshold Voltage:	- 3.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Development Kit:	CG2H40045F-TB
Gain:	16 dB
Maximum Operating Frequency:	4 GHz
Minimum Operating Frequency:	0 Hz
Output Power:	45 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	40
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V
Unit Weight:	9.105 g

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Datasheet

CG2H40045F Datasheet (PDF)

PCN

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CG2H40xx & CG2H30xx GaN HEMTs

MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.