CG2H40025F

Name: MACOM CG2H40025F
Brand: MACOM
SKU: 941-CG2H40025F
Price: 306.64 CAD
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser #:

941-CG2H40025F

Mfr. #:

CG2H40025F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT DC-6.0GHz, 25 Watt

Datasheet:

CG2H40025F Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about MACOM CG2H40025F

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 815

Expected 2026-03-30
Factory Lead-Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$306.64	$306.64
	$240.48	$2,404.80

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package / Case:	440166
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	3 A
Vgs th - Gate-Source Threshold Voltage:	- 3.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Gain:	15 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	0 Hz
Output Power:	25 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	80
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V
Unit Weight:	10.566 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CG2H40025F Datasheet (PDF)

PCN

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CG2H40xx & CG2H30xx GaN HEMTs

MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.