BSM600D12P4G103

ROHM Semiconductor
755-BSM600D12P4G103
BSM600D12P4G103

Mfr.:

Description:
MOSFET Modules 1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET

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In Stock: 4

Stock:
4 Can Ship Immediately
Factory Lead-Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$1,822.07 $1,822.07

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
Module
N-Channel
2 Channel
1.2 kV
567 A
- 4 V, + 21 V
4.8 V
- 40 C
+ 150 C
1.78 kW
Bulk
Brand: ROHM Semiconductor
Configuration: Dual
Fall Time: 90 ns
Length: 152 mm
Product Type: MOSFET Modules
Rise Time: 110 ns
Factory Pack Quantity: 4
Subcategory: Discrete and Power Modules
Type: SiC Power Module
Typical Turn-Off Delay Time: 435 ns
Typical Turn-On Delay Time: 135 ns
Vr - Reverse Voltage: 1.2 kV
Width: 62 mm
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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.