BSM120D12P2C005

ROHM Semiconductor
755-BSM120D12P2C005
BSM120D12P2C005

Mfr.:

Description:
MOSFET Modules Mod: 1200V 120A (w/ Diode)

Datasheet:
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Learn more about ROHM Semiconductor BSM120D12P2C005

In Stock: 11

Stock:
11 Can Ship Immediately
Factory Lead-Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 11 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$570.01 $570.01

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
Module
N-Channel
2 Channel
1.2 kV
134 A
- 6 V, + 22 V
2.3 V
- 40 C
+ 150 C
935 W
BSMx
Bulk
Brand: ROHM Semiconductor
Configuration: Dual
Fall Time: 60 ns
Height: 21.1 mm
Length: 122 mm
Product Type: MOSFET Modules
Rise Time: 50 ns
Factory Pack Quantity: 12
Subcategory: Discrete and Power Modules
Type: SiC Power Module
Typical Turn-Off Delay Time: 170 ns
Typical Turn-On Delay Time: 45 ns
Vr - Reverse Voltage: 1.2 kV
Width: 45.6 mm
Unit Weight: 279.413 g
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Attributes selected: 0

CAHTS:
8542310000
CNHTS:
8504409100
USHTS:
8542310075
KRHTS:
8542311000
TARIC:
8542319000
MXHTS:
8542310302
ECCN:
EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

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