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IMBF170R1K0M1XTMA1

Name: Infineon IMBF170R1K0M1XTMA1
Brand: Infineon Technologies
SKU: 726-IMBF170R1K0M1XTM
Price: 7.36 CAD
Availability: InStock

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Mouser #:

726-IMBF170R1K0M1XTM

Mfr. #:

IMBF170R1K0M1XTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package

Datasheet:

IMBF170R1K0M1XTMA1 Datasheet (PDF)

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In Stock: 741

Stock:: 741

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On Order:: 4,000

Expected 2026-03-02
Factory Lead-Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$7.36	$7.36
	$4.87	$48.70
	$3.66	$366.00
	$3.32	$1,660.00
Full Reel (Order in multiples of 1000)
	$2.73	$2,730.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	5.2 A
Rds On - Drain-Source Resistance:	1 Ohms
Vgs - Gate-Source Voltage:	- 10 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	68 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Fall Time:	22 ns
Forward Transconductance - Min:	0.42 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Rise Time:	11 ns
Series:	CoolSiC 1700V
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	19 ns
Part # Aliases:	IMBF170R1K0M1 SP002739692
Unit Weight:	1.600 g

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Datasheet

IMBF170R1K0M1XTMA1 Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

CoolSiC™ 1700V SiC Trench MOSFETs

Infineon CoolSiC™ 1700V SiC Trench MOSFETs feature a revolutionary Silicon Carbide material optimized for fly-back topologies. The SiC Trench MOSFETs offer a 12V/0V gate-source voltage compatible with most fly-back controllers.